Layout methods of integrated circuits having unit MOS devices

ABSTRACT

A semiconductor structure includes an array of unit metal-oxide-semiconductor (MOS) devices arranged in a plurality of rows and a plurality of columns is provided. Each of the unit MOS devices includes an active region laid out in a row direction and a gate electrode laid out in a column direction. The semiconductor structure further includes a first unit MOS device in the array and a second unit MOS device in the array, wherein active regions of the first and the second unit MOS devices have different conductivity types.

TECHNICAL FIELD

This invention relates generally to semiconductor devices, and moreparticularly to layout designs and manufacturing methods ofmetal-oxide-semiconductor devices.

BACKGROUND

Metal-oxide-semiconductor (MOS) devices are key components of modernintegrated circuits. To satisfy the requirements of increasingly fasterspeed, the drive currents of MOS devices need to be increasinglygreater. Since the drive currents of MOS devices are proportional totheir gate widths, MOS devices with greater widths are preferred.

In addition, more functions need to be integrated into a singlesemiconductor chip, and hence more semiconductor devices need to beformed therein. Accordingly, semiconductor devices are required to beincreasingly smaller, and device densities need to be increasinglyhigher. The requirements of smaller devices and higher drive currentscause the design of integrated circuits to be more and more complex. Forexample, high device density makes the overlay windows, which areallowable misalignment between different masks, to be small, and hence asmall misalignment may cause a device failure.

The reduction in the overlay windows is further worsened by theintroduction of Fin field-effect transistors (FinFET), which are widelyused to increase drive currents. A FinFET includes a fin having a topsurface and two sidewalls, and a gate over both the top surface and thesidewalls. Therefore, the FinFETs have increased effective gate widthssince the sidewalls of the FinFETs are also used to conduct currents.However, FinFETs put an even higher requirement on the design ofintegrated circuits due to the process of forming and isolating fins.Particularly, FinFETs have small fins. It is thus difficult to aligncontacts accurately to the fins.

Additionally, conventional MOS device formation needs to form customizedactive regions and gate electrodes, and thus the pattern densities ofthe active regions, STI regions, and gate electrodes become an importantissue for controlling device performance.

Accordingly, what are needed in the art are novel manufacturing methodsand semiconductor device structures to simplify the design of integratedcircuits.

SUMMARY OF THE INVENTION

In accordance with one aspect of the present invention, a semiconductorstructure includes an array of unit metal-oxide-semiconductor (MOS)devices arranged in a plurality of rows and a plurality of columns isprovided. Each of the unit MOS devices includes an active region laidout in a row direction and a gate electrode laid out in a columndirection. The semiconductor structure further includes a first unit MOSdevice in the array and a second unit MOS device in the array, whereinactive regions of the first and the second unit MOS devices havedifferent conductivity types.

In accordance with another aspect of the present invention, asemiconductor structure includes an array of identical unitmetal-oxide-semiconductor (MOS) devices arranged in a plurality of rowsand a plurality of columns, wherein each of the unit MOS devicesincludes an active region laid out in a first direction, wherein thefirst direction is selected from a row direction and a column direction;and a gate electrode laid out in a second direction perpendicular to thefirst direction. The semiconductor structure further includes a firstunit MOS device in the array, and a second unit MOS device in the arrayand adjacent to the first unit MOS device, wherein the first and thesecond unit MOS devices are aligned in the second direction; a firstcontact electrically connecting sources of the first and the second unitMOS devices; and a second contact electrically connecting drains of thefirst and the second unit MOS devices, wherein gates of the first andthe second unit MOS devices are electrically connected.

In accordance with yet another aspect of the present invention, asemiconductor structure includes a first array, and a second arraysubstantially identical to the first array, wherein the first and thesecond arrays each comprise identical unit metal-oxide-semiconductor(MOS) devices arranged in a plurality of rows and a plurality ofcolumns. Each of the unit MOS devices includes an active region laid outin a first direction, wherein the first direction is selected from a rowdirection and a column direction; and a gate electrode laid out in asecond direction perpendicular to the first direction. The semiconductorstructure further includes a first plurality of contacts in the firstarray; and a second plurality of contacts in the second array, whereinthe first plurality of contacts are laid out substantially differentfrom the second plurality of contacts.

In accordance with yet another aspect of the present invention, a methodfor forming a semiconductor structure includes forming an array of unitmetal-oxide-semiconductor (MOS) devices in a plurality of rows and aplurality of columns. Each of the unit MOS devices includes an activeregion laid out in a row direction; and a gate electrode laid out in acolumn direction. The method further includes forming a contact barconnecting a first source/drain region of a first unit MOS device in thearray and a second source/drain region of a second unit MOS device inthe array; implanting the first source/drain region with a firstimpurity; and implanting the second source/drain region with a secondimpurity having opposite conductivity type than the first impurity.

In accordance with yet another aspect of the present invention, a methodof forming a semiconductor structure includes providing a layout libraryfor forming an array comprising identical unit metal-oxide-semiconductor(MOS) devices, wherein the unit MOS devices are arranged in a pluralityof rows and a plurality of columns, and wherein each of the unit MOSdevices includes an active region laid out in a row direction; and agate electrode laid out in a column direction. The method furtherincludes using the layout library to form a first array; using thelayout library to form a second array separated from the first array;forming a first plurality of contacts in the first array to form a firstcircuit; and forming a second plurality of contacts in the second arrayto form a second circuit, wherein the first plurality of contacts arelaid out substantially different from the second plurality of contacts.

The advantageous features of the present invention include reducedcomplexity in the formation of integrated circuits, improved accuracy inthe formation of contacts, and reduced loading effects.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIGS. 1 through 5 illustrate intermediate stages in the manufacturing ofa embodiments of the present invention;

FIG. 6 illustrates an embodiment of the present invention, wherein twointegrated circuits are formed using identical arrays have identicalunit MOS devices; and

FIG. 7 illustrates an embodiment of the present invention, whereinactive regions in two arrays have different orientations.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

A novel semiconductor structure and methods for forming the same areprovided. The intermediate stages of manufacturing a preferredembodiment of the present invention are illustrated. The variations andoperation of the preferred embodiments are also discussed. Throughoutthe various views and illustrative embodiments of the present invention,like reference numbers are used to designate like elements.

FIG. 1 illustrates a top view of a semiconductor structure, whichincludes an array of unit metal-oxide-semiconductor (MOS) devices 14.Throughout the description, an unit MOS device includes an active region(in which source and drain regions are formed), a gate dielectric, agate electrode, and gate spacers. However, the contacts to the gateelectrode and source/drain regions are not considered as part of theunit MOS device. The array has M rows and N columns, wherein M and N areintegers having values of greater than one. Preferably, integers M and Nare each greater than 4, and more preferably greater than about 16, andeven preferably greater than about 256. Each unit MOS device in thearray may be referred to according to its row number and column number.For example, the MOS device in row i and column j is referred to as14(i, j). Further, the features of an unit MOS device in the array maybe referred to using the respective row number and column number of theunit MOS device.

Each of the unit MOS devices in the array includes an active region anda gate electrode over the active region, wherein the active region andthe gate electrode are referred to as 10(i, j) and 12 (i, j),respectively, assuming i and j are a row number and a column number ofthe unit MOS device, respectively.

Throughout the description, the gate length direction of the unit MOSdevices are defined as the row direction, or X-direction in FIG. 1,while the gate width direction is defined as the column direction, orY-direction. One skilled in the art will realize, however, that the rowdirection and the column direction may be interchangeably defined.Accordingly, all active regions in the array are laid out in Xdirection, and all gate electrodes in the array are laid out in Ydirection. The active regions are isolated from each other by insulatingregions 16, for example, shallow trench isolation (STI) regions or fieldoxides. Preferably, no other active regions exist between active regions10.

Unit MOS devices 14 in the array may be either planar MOS devices (referto FIG. 3A) or Fin field-effect transistors (FinFET, refer to FIG. 3B).However, all unit MOS devices 14 in the array are preferably identical,that is, either all MOS devices 14 are planar devices, or all MOSdevices 14 are FinFETs.

In a first embodiment of the present invention, unit MOS devices 14 aresubstantially identical to each other in dimensions. The active regionsand gate electrodes of the unit MOS devices 14 are identical to eachother in lengths and widths. In other embodiments, the active regions ofsome of the unit MOS devices 14 are different from other unit MOSdevices 14 in the same array. In an exemplary embodiment, active regions10 in row 2 may have a different width from active regions in row 1.Such an arrangement is advantageous in certain integrated circuits. Forexample, dual-port static random access memory cell may require thepull-down transistors to be twice as wide as pull-up transistors.Therefore, row 1 may be used to form pull-up transistors, while row 2may be used to form pull-down transistors. Preferably, unit MOS devices14 in a same row (or a column) are identical to each other, and may bedifferent to the unit MOS devices 14 in other rows (or columns). In yetother embodiments, an array may be divided into more than one sub array,within the unit MOS devices in a same array are identical to each otherin dimensions. However, from one sub array to another, the dimensions ofthe active regions and gate electrodes may be different.

FIG. 2 illustrates the formation of contacts 18 and 20, which connectthe source/drain regions and gates of unit MOS devices, respectively. Anadvantageous feature of the embodiments of the present invention is thatthe unit MOS devices in the array can be easily connected to form MOSdevices with greater drive currents. For example, MOS devices 14(1, 1)and 14(2, 1) are parallel connected with their respective gatesinterconnected, sources interconnected, and drains interconnected.Accordingly, MOS devices 14(1, 1) and 14(2, 1) act as a single MOSdevice, and the drive current of the resulting MOS device is twice thedrive current of each of the unit MOS devices 14(1, 1) and 14(2, 1).Similarly, all respective gates, source and drains of unit MOS devices14(1, 2), 14(2, 2) and 14(3, 2) are interconnected, forming a MOS devicehaving three times the drive current as each of the unit MOS devices.Advantageously, since the current flowing through the connected unit MOSdevices is distributed to the unit MOS devices through contacts 18,which have a significantly higher conductivity than that of activeregions, the current distribution is more uniform, and current crowdingis significantly reduced.

In the preferred embodiment, contacts 18 and 20 that are used to combineunit MOS devices into greater MOS devices are all laid out in a samedirection (Y direction) throughout the array. Advantageously, theoverlay window in the Y direction for forming contact, which is themaximum allowable misalignment in the Y direction, is substantiallyincreased. FIG. 2 clearly shows that misalignment in the Y direction ismore unlikely to cause problem.

MOS device 14(5, 2) is an example of a single MOS device notinterconnected to other MOS devices. Accordingly, its drive current islower than the interconnected MOS devices. It is appreciated that in anintegrated circuit, MOS devices with different drive currents may beneeded. The embodiments of the present invention advantageously providethe flexibility to easily design MOS devices with different drivecurrents. Contacts to the gates of single unit MOS devices 14 may beformed directly over gate electrode, as the contact 20(5, 2), or asideof the gate electrode, as the contact 20(M, 2). Please note some of theunit MOS devices, such 14(3, N-1), do not have connected contacts, andthus these unit MOS devices are essentially dummy MOS devices.

Advantageously, contacts 18 are bar-shaped contacts, and hence haverelatively greater sizes. Since the aspect ratios of contacts arebecoming increasingly greater with the down scaling of integratedcircuits, it is more difficult to form contact openings. Therefore,being able to increase the sizes of the contacts is a desirable feature.

FIGS. 3A and 3B are cross-sectional views of the structure shown in FIG.2, wherein the cross-sectional view is taken along a plane crossing lineA-A′. In the embodiment shown in FIG. 3A, the unit MOS devices areplanar MOS devices, and hence the top surfaces of active regions 10 aresubstantially level with top surfaces of insulating regions 16. Contact18 interconnects the active regions 10 of two neighboring MOS devices.Contact 18 is formed in an inter-layer dielectric (ILD) 24, and the topsurface of contact 18 interfaces with the lowest metallization layer(commonly referred to as M1). For simplicity, source/drain silicideregions are not shown.

In the embodiment shown in FIG. 3B, the unit MOS devices are FinFETs,active regions 10 are thus elevated over the top surface of insultingregions 16, forming fins. Contact 18 interconnects the fins of theneighboring unit MOS devices.

FIG. 4 is a cross-sectional view of the structure shown in FIG. 2,wherein the cross-sectional view is taken along a plane crossing lineB-B′. It shows that contact 20 crosses the gates of the neighboring unitMOS devices. One skilled in the art will realize, however, that thereare various alternative methods for making contacts to the unit MOSdevices, and these methods are in the scope of the present invention.

FIG. 5 illustrates the connection (referred to as contact pickuphereinafter) of contacts forming circuits. The embodiments of thepresent invention are suitable for forming various types of integratedcircuits, including logic circuits, memory circuits, and the like. Thecontact pickups may be made through metal lines and vias formed inmetallization layers. In an exemplary embodiment, the MOS device formedof interconnected unit MOS devices 14(1, 1) and 14(2, 1) is a PMOSdevice, while the MOS device formed of interconnected unit MOS devices14(3, 1) and 14(4, 1) is an NMOS device. Accordingly, metal line 30 maybe formed in metallization layer M1 to interconnect contacts 18, whichare in turn connected to the active regions of the PMOS device and theNMOS device. The resulting MOS device pair is widely used in invertersand static random access memory (SRAM) cells.

Similarly, contact pickup 32 is formed to interconnect two MOS devices,each including three interconnected unit MOS devices. Contact pickups 34illustrate how the gates of two MOS devices may be connected. Contactpickups 36 may be connected to semiconductor devices outside the array.

In an embodiment of the present invention, the active regions 10 in thearray are implanted either with a p-type impurity or an n-type impurity,depending on the desired conductivity type of the MOS devices. Forexample, active regions 10(1, 1) and 10 (2, 1) are of p-type, whileactive regions 10(3, 1) and 10 (4, 1) are of n-type. In alternativeembodiments, the array is divided into sub arrays (similar to thestructure shown in FIG. 6), and each sub array is implanted with onetype of impurity. In yet other embodiments, the unit MOS devices indifferent rows or columns are implanted with impurities having differentconductivity types. Contact pickups are made between the sub arraysand/or rows/columns to form integrated circuits. In an exemplaryembodiment, p-type sub arrays and/or rows/columns and n-type sub arraysand/or rows/columns are alternately located so that the length ofcontact pickups may be reduced. In yet other embodiments, asemiconductor chip includes a plurality of arrays, each having oneconductivity type.

The embodiments of the present invention allow the flexibility in thedesign of integrated circuits. Advantageously, designers do not have tocustomize the shape, dimensions and orientations of active regions andgate electrodes to fit requirements of different drive currents.Instead, the structure shown in FIG. 1 may be used as a standardlibrary, which may be plugged into the design of different integratedcircuits. Designers only need to change the design of contacts andcontact pickups (as illustrated in FIGS. 2 and 5) in order to designdifferent integrated circuits having different functions. Accordingly,the masks for forming active regions, STI regions, and gate electrodesof different integrated circuits are the same. This significantlyreduces the design complexity and design cost. It is realized that theembodiments of the present invention may be applied to the designs ofdifferent semiconductor chips, even though the circuits of thesemiconductor chips are different. Accordingly, two semiconductor chipsmay have substantially identical arrays of unit MOS devices, butdifferent circuits and functions.

To accommodate different design requirements, a semiconductor chip mayinclude a different number of arrays. Each of the arrays may be designedusing essentially the same specification as discussed in the precedingparagraphs. FIG. 6 illustrates two exemplary arrays, array 1 and array2. In an embodiment, the active regions and gate electrodes in array 1and array 2 are identical. However, arrays 1 and 2 form differentintegrated circuits, which is achieved by forming different contacts andcontact pickups. In alternative embodiments, array 1 has differentnumbers of rows and/or columns from array 2.

FIG. 7 illustrates yet other embodiments, wherein array 1 and array 2have different orientations, that is, the active regions in array 1 arelaid out in the/an X direction, while active regions in array 2 are laidout in the/a Y direction. In yet other embodiments, the integratedcircuits in an entire chip are substantially formed of arrays, althoughthe arrays may have different combinations of contact and contact pickupdesigns, array sizes, implantation types, and/or orientations.

Since the active regions and gate electrodes in the embodiments of thepresent invention are highly uniform, the pattern loading effects in theformation of active regions and gate electrodes are substantiallyeliminated. The design effort for laying out the active regions and gateelectrodes is also substantially saved, since the standard library ofactive regions and gate electrodes can be reused from circuits tocircuits, and from chips to chips. A further advantageous feature isthat without the concern of loading effects and the need to route gateelectrodes and active regions, the unit MOS devices can be tightlyspaced, and hence the device density increased.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

1. A semiconductor structure comprising: an array of unitmetal-oxide-semiconductor (MOS) devices arranged in a plurality of rowsand a plurality of columns, wherein each of the unit MOS devicescomprises: an active region laid out in a row direction; and a gateelectrode laid out in a column direction; a first unit MOS device in thearray; and a second unit MOS device in the array, wherein active regionsof the first and the second unit MOS devices have different conductivitytypes.
 2. The semiconductor structure of claim 1, wherein unit MOSdevices in the array are identical to each other in dimensions.
 3. Thesemiconductor structure of claim 1, wherein the array comprises a firstsub region and a second sub region, and wherein unit MOS devices in thefirst region have different dimensions than unit MOS devices in thesecond region.
 4. The semiconductor structure of claim 1, wherein thearray comprises a first sub region and a second sub region havingdifferent numbers of unit MOS devices.
 5. The semiconductor structure ofclaim 1, wherein active regions of the unit MOS devices in the array areisolated from each other by insulating regions, and whereinsubstantially no active region exists between the active regions of theunit MOS devices.
 6. The semiconductor structure of claim 1, wherein allactive regions of the unit MOS devices are substantially rectangular. 7.The semiconductor structure of claim 1, wherein the array comprises athird unit MOS device and a fourth unit MOS device in a same column andnext to each other, and wherein the semiconductor structure furthercomprises: a first contact electrically connecting sources of the thirdand the fourth unit MOS devices; and a second contact electricallyconnecting drains of the third and the fourth unit MOS devices, whereingates of the third and the fourth unit MOS devices are electricallyconnected.
 8. The semiconductor structure of claim 7, wherein the arrayfurther comprises a fifth unit MOS device in a same column and next tothe fourth unit MOS device, and wherein the semiconductor structurefurther comprises: a third contact electrically connecting sources ofthe fourth and the fifth unit MOS devices; and a fourth contactelectrically connecting drains of the fourth and the fifth unit MOSdevices, wherein gates of the third, the fourth and the fifth unit MOSdevices are electrically connected.
 9. The semiconductor structure ofclaim 1 further comprising an additional array identical to the array,wherein contacts and contact pickups in the additional array aresubstantially different from contacts and contact pickups in the array,and wherein the array and the additional array form different integratedcircuits.
 10. The semiconductor structure of claim 1, wherein the unitMOS devices are planar MOS devices.
 11. The semiconductor structure ofclaim 1, wherein the unit MOS devices are Fin field-effect transistors.12. The semiconductor structure of claim 1, wherein the array is not amemory array.
 13. A semiconductor structure comprising: an array ofidentical unit metal-oxide-semiconductor (MOS) devices arranged in aplurality of rows and a plurality of columns, wherein each of the unitMOS devices comprises: an active region laid out in a first direction,wherein the first direction is selected from a row direction and acolumn direction; and a gate electrode laid out in a second directionperpendicular to the first direction, wherein the second direction isselected from the row direction and the column direction; a first unitMOS device in the array; a second unit MOS device adjacent the firstunit MOS device, wherein the first and the second unit MOS devices arealigned in the second direction; a first contact electrically connectingsources of the first and the second unit MOS devices; and a secondcontact electrically connecting drains of the first and the second unitMOS devices, wherein gates of the first and the second unit MOS devicesare electrically connected.
 14. The semiconductor structure of claim 13,wherein the first and the second contacts extend in the seconddirection.
 15. A semiconductor structure comprising: a first array; asecond array substantially identical to the first array, wherein thefirst and the second arrays each comprise identical unitmetal-oxide-semiconductor (MOS) devices arranged in a plurality of rowsand a plurality of columns, and wherein each of the unit MOS devices inthe first and the second arrays comprises: an active region laid out ina first direction, wherein the first direction is selected from a rowdirection and a column direction; and a gate electrode laid out in asecond direction perpendicular to the first direction, wherein thesecond direction is selected from the row direction and the columndirection; a first plurality of contacts in the first array; and asecond plurality of contacts in the second array, wherein the firstplurality of contacts are laid out substantially different from thesecond plurality of contacts.
 16. The semiconductor structure of claim15, wherein the first and the second arrays are in a same semiconductorchip.
 17. The semiconductor structure of claim 16, wherein the activeregions of the unit MOS devices in the first array is laid out in adirection perpendicular to the active regions of the unit MOS devices inthe second array.
 18. The semiconductor structure of claim 15, whereinactive regions in the first array have an opposite conductivity typefrom active regions in the second array.
 19. The semiconductor structureof claim 15, wherein the first array comprises a first unit MOS device,and the second array comprises a second unit MOS device having a samerow number and a same column number as the first unit MOS device, andwherein the first and the second unit MOS devices have oppositeconductivity types.